Prakt. Met. Sonderband 52 (2018) 47
Marg) TERIRISIInoEaS ian”
MES Can run lata”
iy FEEL a
the deposition X [mm]
1S. Spanning 4
a Fig. 1: a) Coordinates of 342 measurement areas for high-throughput characterization on
Nate) Ph a 100 mm diameter substrate; b) photo ofa thin-film materials library. The crosses and
denon numbers are structured by a photolithographic lift-off process.
"aracterization
Spectroscopy
Inge of severa|
ethods and to Table 1: Overview of high-throughput characterization methods necessary for a
comprehensive characterization of multinary materials.
Property High-throughput characterization method
Film thickness Surface profilometry (needs pre-patterned substrate) :
Energy-dispersive X-ray analysis (EDX),
not for light elements
s for mutnary Chemical composition Rutherford Backscatter Spectroscopy (RBS),
ah-throughput nuclear reaction analysis NRA
and applicable X-ray photoelectron spectroscopy (XPS)
results which Crystal structure(s) X-ray diffraction (XRD)
Mechanical properties Nanoindentation
Electrical properties High-throughput test-stand (HT TS) (four-point probe)
css should Magnetic properties High-throughput test-stand (magneto-optical Kerr
Ins comprised effect, MOKE)
applied high- Optical properties Photography, optical transmission
gods, Microstructure Atomic force microscopy (AFM), scanning electron
ve _ microscopy (SEM)
1 tis n most Photoelectrochemical Optical scanning droplet cell (OSDC)
weve, wil properties _ _
. fe anes Phase transformation properties Temperature-dependent resistivity measurements
cally thermally R(T)
„film materials —
tolithographic
no thin film is
von the wafer
A