Full text: Technical Commission III (B3)

    
  
  
  
    
   
   
   
   
   
  
   
  
  
  
  
  
  
  
   
   
  
    
    
  
   
   
   
   
   
  
  
   
   
   
   
  
    
   
   
   
   
  
   
     
21 to the 
must be 
rture is 
plan is 
ineously 
culty of 
ter sub- 
vertical 
um, the 
| 25° in 
-33mrad 
ist —axis 
mm and 
nic lens 
5 mm in 
align the 
ng laser 
th the 
' optical 
ig. With 
mulated 
3. The 
depicted 
  
Figure 2. The illustration of divergence angle of laser 
emitting (Hu, 2005) 
Laser source T ee 
Screen 
Prism 
  
  
  
  
  
  
  
  
  
Rapid Stow 
Alignment Alignment 
  
Figure 3. Simulated alignment of laser emitting system 
  
Figure 4. Simulated 3D model for alignment of laser 
emitting system 
3. COMPONENTS OF LIGHT-EMITING SYSTEM 
3.1 Laser Diode 
TPGAS2S09H diode laser with wavelength of 905 nm is 
used for this project. Diode lasers in the 1300 nm to 1600 
nm regime are used in a variety of applications including 
pumping, range finding, materials processing, and 
aesthetic medical treatments. In addition to the compact 
size, efficiency, and low cost advantages of traditional 
diode lasers, high power semiconductor lasers in the eye- 
safe regime are becoming widely used in an effort to 
minimize the unintended impact of potentially hazardous 
scattered optical radiation from the laser source, the 
optical delivery system, or the target itself. 
The laser diode has the following characteristics (see 
Figure 5): 
— Peak power >300 W at 30 A driving current and 
100 ns pulse width. 
— 905 nm pulsed laser output. 
- Extremely high reliability. 
- Small emitting areas allow ease of lens or fiber 
coupling. 
International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Volume XXXIX-B3, 2012 
XXII ISPRS Congress, 25 August — 01 September 2012, Melbourne, Australia 
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
RAS 219 3456 10.1521 
ase 25 
DIE DACH na 
ia 4 Qe A. 
NS WS N 
— ani 
- d. 1o fW sd 
i X b / 
se à 755 / 
Fe 
255 THE 
"ES a3 a. 1021 
(185; Bas VZO 
(a) 
iG 
a 
$ 
2 50 
& 
$ 
Om 
a 
I y 
90 
% 
a 
  
Figure 5. (a) Package drawing and (b) its spectral plot 
distribution ( http://www.perkinelmer.com/ 
CMSResources /Images/44-6562DTS_HighPowerLaser 
DiodesforRange Finding.pdf) 
The junction plane, light-emitting surface and divergence 
angle of diode laser are depicted in Figure. As seen, the 
light-emitting surface is not symmetric with the 
divergence angle. For each light-emitting element, the 
length in the directtion parallel to junction plane is about 
230 um, and the height in the direction of vertical to 
junction plane is 1pm. The divergence angles in direction 
parallel to and vertical to junction plane is 10° and 25°, 
respectively. The major functionality of light-emitting 
optical system of diode laser is aligning and shaping to 
the bundle of light, which are no-symmetric, big 
divergence angle and poor quality, to make them meet 
the requirement of laser, i.e., small divergence angle, 
alignment and high energetic light. 
The final required bundle of laser is: Divergence angles 
in horizontal and vertical direction is approximately 
30~33mrad, the energy Transmittance laser reach above 
95%. 
230um 
2 
Junction plane epo 
lum — 
1 Lightemitting surface 
10* E 
Figure 6. Illustration of ligh-emitting surface and 
divergencey angle. 
This laser emitting sub-system is to generate high energy 
of laser. As a initial research, a prototype with 5 x 5
	        
Waiting...

Note to user

Dear user,

In response to current developments in the web technology used by the Goobi viewer, the software no longer supports your browser.

Please use one of the following browsers to display this page correctly.

Thank you.