Prakt. Met. Sonderband 52 (2018) 47 
Marg) TERIRISIInoEaS ian” 
MES Can run lata” 
iy FEEL a 
the deposition X [mm] 
1S. Spanning 4 
a Fig. 1: a) Coordinates of 342 measurement areas for high-throughput characterization on 
Nate) Ph a 100 mm diameter substrate; b) photo ofa thin-film materials library. The crosses and 
denon numbers are structured by a photolithographic lift-off process. 
"aracterization 
Spectroscopy 
Inge of severa| 
ethods and to Table 1: Overview of high-throughput characterization methods necessary for a 
comprehensive characterization of multinary materials. 
Property High-throughput characterization method 
Film thickness Surface profilometry (needs pre-patterned substrate) : 
Energy-dispersive X-ray analysis (EDX), 
not for light elements 
s for mutnary Chemical composition Rutherford Backscatter Spectroscopy (RBS), 
ah-throughput nuclear reaction analysis NRA 
and applicable X-ray photoelectron spectroscopy (XPS) 
results which Crystal structure(s) X-ray diffraction (XRD) 
Mechanical properties Nanoindentation 
Electrical properties High-throughput test-stand (HT TS) (four-point probe) 
css should Magnetic properties High-throughput test-stand (magneto-optical Kerr 
Ins comprised effect, MOKE) 
applied high- Optical properties Photography, optical transmission 
gods, Microstructure Atomic force microscopy (AFM), scanning electron 
ve _ microscopy (SEM) 
1 tis n most Photoelectrochemical Optical scanning droplet cell (OSDC) 
weve, wil properties _ _ 
. fe anes Phase transformation properties Temperature-dependent resistivity measurements 
cally thermally R(T) 
„film materials — 
tolithographic 
no thin film is 
von the wafer 
A